Top-Down Fabrication of Bulk-Insulating Topological Insulator Nanowires for Quantum Devices.
basic_science · Level V
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- Record sourced from PubMed, PMID 36976857.
- Also identified by DOI 10.1021/acs.nanolett.3c00169.
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Abstract
In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum confinement of topological surface states leads to a peculiar sub-band structure that is useful for generating Majorana bound states. Top-down fabrication of TINWs from a high-quality thin film would be a scalable technology with great design flexibility, but there has been no report on top-down-fabricated TINWs where the chemical potential can be tuned to the charge neutrality point (CNP). Here we present a top-down fabrication process for bulk-insulating TINWs etched from high-quality (Bi<sub>1-<i>x</i></sub>Sb<sub><i>x</i></sub>)<sub>2</sub>Te<sub>3</sub> thin films without degradation. We show that the chemical potential can be gate-tuned to the CNP, and the resistance of the NW presents characteristic oscillations as functions of the gate voltage and the parallel magnetic field, manifesting the TI-sub-band physics. We further demonstrate the superconducting proximity effect in these TINWs, preparing the groundwork for future devices to investigate Majorana bound states.