Scaling of MoS<sub>2</sub> Transistors and Inverters to Sub-10 nm Channel Length with High Performance.
basic_science · Level V
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- Record sourced from PubMed, PMID 37010357.
- Also identified by DOI 10.1021/acs.nanolett.3c00031.
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Abstract
Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS<sub>2</sub>) are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from their atomic thickness, dangling-bond-free flat surface, and excellent gate controllability. However, despite great prospects, the fabrication of 2D ultrashort channel FETs with high performance and uniformity remains a challenge. Here, we report a self-encapsulated heterostructure undercut technique for the fabrication of sub-10 nm channel length MoS<sub>2</sub> FETs. The fabricated 9 nm channel MoS<sub>2</sub> FETs exhibit superior performances compared with sub-15 nm channel length including the competitive on-state current density of 734/433 μA/μm at <i>V</i><sub>DS</sub> = 2/1 V, record-low DIBL of ∼50 mV/V, and superior on/off ratio of 3 × 10<sup>7</sup> and low subthreshold swing of ∼100 mV/dec. Furthermore, the ultrashort channel MoS<sub>2</sub> FETs fabricated by this new technique show excellent homogeneity. Thanks to this, we scale the monolayer inverter down to sub-10 nm channel length.