Ultrafast and Low-Power 2D Bi₂O₂Se Memristors for Neuromorphic Computing Applications.

Abstract

Memristors that emulate synaptic plasticity are building blocks for opening a new era of energy-efficient neuromorphic computing architecture, which will overcome the limitation of the von Neumann bottleneck. Layered two-dimensional (2D) Bi₂O₂Se, as an emerging material for next-generation electronics, is of great significance in improving the efficiency and performance of memristive devices. Herein, high-quality Bi₂O₂Se nanosheets are grown by configuring mica substrates face-down on the Bi₂O₂Se powder. Then, bipolar Bi₂O₂Se memristors are fabricated with excellent performance including ultrafast switching speed (<5 ns) and low-power consumption (<3.02 pJ). Moreover, synaptic plasticity, such as long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), and spike-timing-dependent plasticity (STDP), are demonstrated in the Bi₂O₂Se memristor. Furthermore, MNIST recognition with simulated artificial neural networks (ANN) based on conductance modification could reach a high accuracy of 91%. Notably, the 2D Bi₂O₂Se enables the memristor to possess ultrafast and low-power attributes, showing great potential in neuromorphic computing applications.