Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe<sub>4</sub>GeTe<sub>2</sub> far above room temperature.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 37120587.
- Also identified by DOI 10.1038/s41467-023-37917-8 and PMC identifier 10148834.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (T<sub>c</sub>) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe<sub>4</sub>GeTe<sub>2</sub> with the T<sub>c</sub> reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced T<sub>c</sub>, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe<sub>4</sub>GeTe<sub>2</sub> in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.