Optically Induced Spin Electromotive Force in a Ferromagnetic-Semiconductor Quantum Well Structure.
basic_science · Level V
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- Record sourced from PubMed, PMID 37126540.
- Also identified by DOI 10.1021/acs.nanolett.3c00769.
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Abstract
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in a GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few-nanometer-thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows the resolution of the dynamic FM proximity effect on a nanometer scale. The method can be generalized to various systems, including rapidly developing 2D van der Waals materials.