Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 37227403.
- Also identified by DOI 10.1021/acs.nanolett.2c04908 and PMC identifier 10273455.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have used epitaxial growth on Si, layer transfer by wafer bonding, or die-to-die packaging. Here we present low-temperature integration of InAs on W using Si<sub>3</sub>N<sub>4</sub> template assisted selective area metal-organic vapor-phase epitaxy (MOVPE). Despite growth nucleation on polycrystalline W, we can obtain a high yield of single-crystalline InAs nanowires, as observed by transmission electron microscopy (TEM) and electron backscatter diffraction (EBSD). The nanowires exhibit a mobility of 690 cm<sup>2</sup>/(V s), a low-resistive, Ohmic electrical contact to the W film, and a resistivity which increases with diameter attributed to increased grain boundary scattering. These results demonstrate the feasibility for single-crystalline III-V back-end-of-line integration with a low thermal budget compatible with Si CMOS.