Polarity-Tunable Field Effect Phototransistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 37252845.
- Also identified by DOI 10.1021/acs.nanolett.3c00728.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Field-effect phototransistors feature gate voltage modulation, allowing dynamic performance control and significant signal amplification. A field-effect phototransistor can be designed to be inherently either unipolar or ambipolar in its response. However, conventionally, once a field-effect phototransistor has been fabricated, its polarity cannot be changed. Herein, a polarity-tunable field-effect phototransistor based on a graphene/ultrathin Al<sub>2</sub>O<sub>3</sub>/Si structure is demonstrated. Light can modulate the gating effect of the device and change the transfer characteristic curve from unipolar to ambipolar. This photoswitching in turn produces a significantly improved photocurrent signal. The introduction of an ultrathin Al<sub>2</sub>O<sub>3</sub> interlayer also enables the phototransistor to achieve a responsivity in excess of 10<sup>5</sup> A/W, a 3 dB bandwidth of 100 kHz, a gain-bandwidth product of 9.14 × 10<sup>10</sup> s<sup>-1</sup>, and a specific detectivity of 1.91 × 10<sup>13</sup> Jones. This device architecture enables the gain-bandwidth trade-off in current field-effect phototransistors to be overcome, demonstrating the feasibility of simultaneous high-gain and fast-response photodetection.