The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices.
basic_science · Level V
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- Record sourced from PubMed, PMID 37259985.
- Also identified by DOI 10.1021/acsnano.3c02263.
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Abstract
The development of two-dimensional (2D) electronics is always accompanied by the discovery of 2D semiconductors with high mobility and specific crystal structures, which may bring revolutionary breakthrough on proof-of-concept devices and physics. Here, Bi<sub>3</sub>O<sub>2.5</sub>Se<sub>2</sub>, a 2D bismuth oxyselenide semiconductor with non-neutral layered crystal structure is discovered. Ultrathin Bi<sub>3</sub>O<sub>2.5</sub>Se<sub>2</sub> films are readily synthesized by chemical vapor deposition, displaying tunable band gaps and high room-temperature field-effect mobility of >220 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. Moreover, the as-synthesized Bi<sub>3</sub>O<sub>2.5</sub>Se<sub>2</sub> nanoplates were fabricated into top-gated transistors with a simple device configuration, whose carrier density can be reversibly regulated in the range of 10<sup>14</sup> cm<sup>-2</sup> just by a facile method of electrostatic doping at room temperature. These features enable it to be functionalized into nonvolatile synaptic transistors with ultralow operating energy consumption (∼0.5 fJ), high repeatability, low operating voltage (0.1 V), and long retention time. Our work extends the family of bismuth oxyselenide 2D semicondutors.