Mesoporous Semiconductive Bi<sub>2</sub>Se<sub>3</sub> Films.
basic_science · Level V
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- Record sourced from PubMed, PMID 37289968.
- Also identified by DOI 10.1021/acs.nanolett.3c00183.
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Abstract
Bi<sub>2</sub>Se<sub>3</sub> is a semiconductive material possessing a bandgap of 0.3 eV, and its unique band structure has paved the way for diverse applications. Herein, we demonstrate a robust platform for synthesizing mesoporous Bi<sub>2</sub>Se<sub>3</sub> films with uniform pore sizes via electrodeposition. Block copolymer micelles act as soft templates in the electrolyte to create a 3D porous nanoarchitecture. By controlling the length of the block copolymer, the pore size is adjusted to 9 and 17 nm precisely. The nonporous Bi<sub>2</sub>Se<sub>3</sub> film exhibits a tunneling current in a vertical direction of 52.0 nA, but upon introducing porosity (9 nm pores), the tunneling current increases significantly to 684.6 nA, suggesting that the conductivity of Bi<sub>2</sub>Se<sub>3</sub> films is dependent on the pore structure and surface area. The abundant porous architecture exposes a larger surface area of Bi<sub>2</sub>Se<sub>3</sub> to the surrounding air within the same volume, thereby augmenting its metallic properties.