Flexible, Transparent, and Wafer-Scale Artificial Synapse Array Based on TiO<sub>x</sub> /Ti<sub>3</sub> C<sub>2</sub> T<sub>x</sub> Film for Neuromorphic Computing.
basic_science · Level V
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- Record sourced from PubMed, PMID 37339620.
- Also identified by DOI 10.1002/adma.202303737.
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Abstract
A high-density neuromorphic computing memristor array based on 2D materials paves the way for next-generation information-processing components and in-memory computing systems. However, the traditional 2D-materials-based memristor devices suffer from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiO<sub>x</sub> /Ti<sub>3</sub> C<sub>2</sub> T<sub>x</sub> film is fabricated by a convenient and energy-efficient solution-processing technique, which realizes high transmittance (≈90%) and oxidation resistance (>30 days). The TiO<sub>x</sub> /Ti<sub>3</sub> C<sub>2</sub> T<sub>x</sub> memristor shows low device-to-device variability, long memory retention and endurance, a high ON/OFF ratio, and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (10<sup>4</sup> bending cycles) of the TiO<sub>x</sub> /Ti<sub>3</sub> C<sub>2</sub> T<sub>x</sub> memristor are achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high-precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that the TiO<sub>x</sub> /Ti<sub>3</sub> C<sub>2</sub> T<sub>x</sub> artificial synapse array holds promise for future neuromorphic computing applications, and provides excellent high-density neuron circuits for new flexible intelligent electronic equipment.