Atomic-Scale Mechanisms of MoS<sub>2</sub> Oxidation for Kinetic Control of MoS<sub>2</sub>/MoO<sub>3</sub> Interfaces.
basic_science · Level V
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- Record sourced from PubMed, PMID 37368991.
- Also identified by DOI 10.1021/acs.nanolett.3c00303.
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Abstract
Oxidation of transition metal dichalcogenides (TMDs) occurs readily under a variety of conditions. Therefore, understanding the oxidation processes is necessary for successful TMD handling and device fabrication. Here, we investigate atomic-scale oxidation mechanisms of the most widely studied TMD, MoS<sub>2</sub>. We find that thermal oxidation results in α-phase crystalline MoO<sub>3</sub> with sharp interfaces, voids, and crystallographic alignment with the underlying MoS<sub>2</sub>. Experiments with remote substrates prove that thermal oxidation proceeds via vapor-phase mass transport and redeposition, a challenge to forming thin, conformal films. Oxygen plasma accelerates the kinetics of oxidation relative to the kinetics of mass transport, forming smooth and conformal oxides. The resulting amorphous MoO<sub>3</sub> can be grown with subnanometer to several-nanometer thickness, and we calibrate the oxidation rate for different instruments and process parameters. Our results provide quantitative guidance for managing both the atomic scale structure and thin-film morphology of oxides in the design and processing of TMD devices.