A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 37378494.
- Also identified by DOI 10.1021/acs.nanolett.3c01570 and PMC identifier 10347697.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g<sup>(2)</sup>(0) = 0.07 ± 0.02) up to 80 K (g<sup>(2)</sup>(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.