A Unipolar Quantum Dot Diode Structure for Advanced Quantum Light Sources.
basic_science · Level V
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- Record sourced from PubMed, PMID 37432064.
- Also identified by DOI 10.1021/acs.nanolett.3c01658.
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Abstract
Triggered, indistinguishable single photons are crucial in various quantum photonic implementations. Here, we realize a novel n<sup>+</sup>-i-n<sup>++</sup> diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the charged states. Blinking-free single-photon emission and high two-photon indistinguishability are observed. The line width's temporal evolution is investigated across over 6 orders of magnitude time scales, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of <i>V</i><sub>TPI,2ns</sub> = (85.8 ± 2.2)% and <i>V</i><sub>TPI,9ns</sub> = (78.3 ± 3.0)%). Most of the dots show no spectral broadening beyond ∼9 ns time scales, and the photons' line width ((420 ± 30) MHz) deviates from the Fourier-transform limit by a factor of 1.68. The combined techniques verify that most dephasing mechanisms occur at time scales ≤2 ns, despite their modest impact. The presence of n-doping implies higher carrier mobility, enhancing the device's appeal for high-speed tunable, high-performance quantum light sources.