Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 37487031.
- Also identified by DOI 10.1021/acsnano.3c04177.
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Abstract
Organic field-effect transistors (OFETs) have the advantages of low-cost, large-area processing and could be utilized in a variety of emerging applications. However, the generally large contact resistance (<i>R</i><sub>c</sub>) limits the integration and miniaturization of OFETs. The <i>R</i><sub>c</sub> is difficult to reduce due to an incompatibility between obtaining strong orbit coupling and the barrier height reduction. In this study, we developed an oxygen-induced barrier lowering strategy by introducing oxygen (O<sub>2</sub>) into the nanointerface between the electrodes and organic semiconductors layer and achieved an ultralow channel width-normalized <i>R</i><sub>c</sub> (<i>R</i><sub>c</sub>·<i>W</i>) of 89.8 Ω·cm and a high mobility of 11.32 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. This work demonstrates that O<sub>2</sub> adsorbed at the nanointerface of metal-semiconductor contact can significantly reduce the <i>R</i><sub>c</sub> from both experiments and theoretical simulations and provides guidance for the construction of high-performance OFETs, which is conducive to the integration and miniaturization of OFETs.