Ferroelectricity in Epitaxial Perovskite Oxide Bi<sub>2</sub>WO<sub>6</sub> Films with One-Unit-Cell Thickness.
basic_science · Level V
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- Record sourced from PubMed, PMID 37590032.
- Also identified by DOI 10.1021/acs.nanolett.3c01426.
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Abstract
Retaining ferroelectricity in ultrathin films or nanostructures is crucial for miniaturizing ferroelectric devices, but it is a challenging task due to intrinsic depolarization and size effects. In this study, we have shown that it is possible to stably maintain in-plane polarization in an extremely thin, one-unit-cell thick epitaxial Bi<sub>2</sub>WO<sub>6</sub> film. The use of a perfectly lattice-matched NdGaO<sub>3</sub> (110) substrate for the Bi<sub>2</sub>WO<sub>6</sub> film minimizes strain and enhances stability. We attribute the residual polarization in this ultrathin film to the crystal stability of the Bi-O octahedral framework against structural distortions. Our findings suggest that ferroelectricity can surpass the critical thickness limit through proper strain engineering, and the Bi<sub>2</sub>WO<sub>6</sub>/NdGaO<sub>3</sub> (110) system presents a potential platform for designing low-energy consumption, nonvolatile ferroelectric memories.