ZrTe<sub>2</sub> Compound Dirac Semimetal Contacts for High-Performance MoS<sub>2</sub> Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 37708326.
- Also identified by DOI 10.1021/acs.nanolett.3c01554.
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Abstract
Recent investigations reveal elemental semimetal (Bi and Sb) contacts fabricated with conventional deposition processes exhibit a remarkable capacity of approaching the quantum limit in two-dimensional (2D) semiconductor contacts, implying it might be an optimal option to solve the contact issue of 2D semiconductor electronics. Here, we demonstrate novel compound Dirac semimetal ZrTe<sub>2</sub> contacts to MoS<sub>2</sub> constructed by a nondestructive van der Waals (vdW) transfer process, exhibiting excellent ohmic contact characteristics with a negligible Schottky barrier. The band hybridization between ZrTe<sub>2</sub> and MoS<sub>2</sub> was verified. The bilayer MoS<sub>2</sub> transistor with a 250 nm channel length on a 20 nm thick hexagonal boron nitride (h-BN) exhibits an <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> current ratio over 10<sup>5</sup> and an on-state current of 259 μA μm<sup>-1</sup>. The current results reveal that 2D compound semimetals with vdW contacts can offer a diverse selection of proper semimetals with adjustable work functions for the next-generation 2D-based beyond-silicon electronics.