Increased Mobility and Reduced Hysteresis of MoS₂ Field-Effect Transistors via Direct Surface Precipitation of CsPbBr₃-Nanoclusters for Charge Transfer Doping.

Abstract

Transition-metal dichalcogenides (TMDs) and metal halide perovskites (MHPs) have been investigated for various applications, owing to their unique physical properties and excellent optoelectronic functionalities. TMD monolayers synthesized via chemical vapor deposition (CVD), which are advantageous for large-area synthesis, exhibit low mobility and prominent hysteresis in the electrical signals of field-effect transistors (FETs) because of their native defects. In this study, we demonstrate an increase in electrical mobility by ∼170 times and reduced hysteresis in the current-bias curves of MoS₂ FETs hybridized with CsPbBr₃ for charge transfer doping, which is implemented via solution-based CsPbBr₃-nanocluster precipitation on CVD-grown MoS₂ monolayer FETs. Electrons injected from CsPbBr₃ into MoS₂ induce heavy n-doping and heal point defects in the MoS₂ channel layer, thus significantly increasing mobility and reducing hysteresis in the hybrid FETs. Our results provide a foundation for improving the reliability and performance of TMD-based FETs by hybridizing them with solution-based perovskites.