Intra-Zero-Energy Landau Level Crossings in Bilayer Graphene at High Electric Fields.

Abstract

The highly tunable band structure of the zero-energy Landau level (zLL) of bilayer graphene makes it an ideal platform for engineering novel quantum states. However, the zero-energy Landau level at high electric fields has remained largely unexplored. Here we present magnetotransport measurements of bilayer graphene in high transverse electric fields. We observe previously undetected Landau level crossings at filling factors ν = -2, 1, and 3 at high electric fields. These crossings provide constraints for theoretical models of the zero-energy Landau level and show that the orbital, valley, and spin character of the quantum Hall states at high electric fields is very different from low electric fields. At high <i>E</i>, new transitions between states at ν = -2 with different orbital and spin polarization can be controlled by the gate bias, while the transitions between ν = 0 → 1 and ν = 2 → 3 show anomalous behavior.