Large-Area Growth of Ferroelectric 2D γ-In<sub>2</sub> Se<sub>3</sub> Semiconductor by Spray Pyrolysis for Next-Generation Memory.
basic_science · Level V
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- Record sourced from PubMed, PMID 37929619.
- Also identified by DOI 10.1002/adma.202308301.
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Abstract
In<sub>2</sub> Se<sub>3</sub> , 2D ferroelectric-semiconductor, is a promising candidate for next-generation memory device because of its outstanding electrical properties. However, the large-area manufacturing of In<sub>2</sub> Se<sub>3</sub> is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large-area In<sub>2</sub> Se<sub>3</sub> thin film. A polycrystalline γ-In<sub>2</sub> Se<sub>3</sub> layer can be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In<sub>2</sub> Se<sub>3</sub> ferroelectric-semiconductor field effect transistor (FeS-FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the ±40 V of gate voltage sweep and excellent uniformity. The FeS-FET exhibits an electron field effect mobility of 0.97 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and an on/off current ratio of >10<sup>7</sup> in the transfer curves. The memory behavior of the large-area, In<sub>2</sub> Se<sub>3</sub> FeS-FETs for next-generation memory is demonstrated.