Shallow Silicon Vacancy Centers with Lifetime-Limited Optical Linewidths in Diamond Nanostructures.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 37989272.
- Also identified by DOI 10.1021/acs.nanolett.3c03145 and PMC identifier 10722541.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The negatively charged silicon vacancy center (SiV<sup>-</sup>) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV<sup>-</sup> centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV<sup>-</sup> with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or repumping. Our results constitute a key step toward the use of near-surface, optically coherent SiV<sup>-</sup> for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.