Over 5 × 10<sup>3</sup>-Fold Enhancement of Responsivity in Ga<sub>2</sub>O<sub>3</sub>-Based Solar Blind Photodetector via Acousto-Photoelectric Coupling.
basic_science · Level V
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- Record sourced from PubMed, PMID 38014834.
- Also identified by DOI 10.1021/acsnano.3c08938.
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Abstract
The emergence of the wide-band-gap semiconductor Ga<sub>2</sub>O<sub>3</sub> has propelled it to the forefront of solar blind detection activity owing to its key features. Although various architectures and designs of Ga<sub>2</sub>O<sub>3</sub>-based solar blind photodetectors have been proposed, their performance still falls short of commercial standards. In this study, we demonstrate a method to enhance the performance of a simple metal-semiconductor-metal-structured Ga<sub>2</sub>O<sub>3</sub>-based solar blind photodetector by exciting acoustic surface waves. Specifically, we demonstrate that under a bias voltage of 100 mV and a radio frequency signal of 20 dBm, the responsivity and detectivity can increase from 2.78 to 1.65 × 10<sup>4</sup> A/W and from 8.35 × 10<sup>14</sup> to 2.66 × 10<sup>16</sup> jones, respectively, rivaling a commercial photomultiplier tube. The over 5 × 10<sup>3</sup>-fold enhancement in responsivity could be attributed to the acousto-photoelectric coupling mechanism. Furthermore, since surface acoustic waves can also serve as signal receivers, such photodetectors offer the prospect of dual-mode detection. Our findings reveal a promising pathway for achieving high-performance Ga<sub>2</sub>O<sub>3</sub>-based electronics and optoelectronics.