Optical Bistability in Nanosilicon with Record Low <i>Q</i>-Factor.
basic_science · Level V
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- Record sourced from PubMed, PMID 38014963.
- Also identified by DOI 10.1021/acs.nanolett.3c03597.
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Abstract
We demonstrated optical bistability in an amorphous silicon Mie resonator with a size of ∼100 nm and <i>Q</i>-factor as low as ∼4 by utilizing photothermal and thermo-optical effects. We not only experimentally confirmed the steep intensity transition and the hysteresis in the scattering response from silicon nanocuboids but also established a physical model to numerically explain the underlying mechanism based on temperature-dependent competition between photothermal heating and heat dissipation. The transition between the bistable states offered particularly steep superlinearity of scattering intensity, reaching an effective nonlinearity order of ∼100th power over excitation intensity, leading to the potential of advanced optical switching devices and super-resolution microscopy.