<i>In Situ</i> Defect Engineering of Controllable Carrier Types in WSe<sub>2</sub> for Homomaterial Inverters and Self-Powered Photodetectors.
basic_science · Level V
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- Record sourced from PubMed, PMID 38038404.
- Also identified by DOI 10.1021/acs.nanolett.3c03328.
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Abstract
WSe<sub>2</sub> has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe<sub>2</sub> still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe<sub>2</sub> is realized via <i>in situ</i> defect engineering. The n-doping of WSe<sub>2</sub> is attributed to Se vacancies induced by the H<sub>2</sub> flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe<sub>2</sub> synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H<sub>2</sub> during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe<sub>2</sub>. This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.