Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38038967.
- Also identified by DOI 10.1021/acs.nanolett.3c03296.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Interlayer excitons (IXs) formed at the interface of van der Waals materials possess various novel properties. In parallel development, strain engineering has emerged as an effective means for creating 2D quantum emitters. Exploring the intersection of these two exciting areas, we use MoS<sub>2</sub>/WSe<sub>2</sub> heterostructure as a model system and demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. Our work presents defect-bound IXs as a promising platform for pushing the performance of 2D quantum emitters beyond their current limitations.