Overbias Photon Emission from Light-Emitting Devices Based on Monolayer Transition Metal Dichalcogenides.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38048755.
- Also identified by DOI 10.1021/acs.nanolett.3c03155 and PMC identifier 10722526.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are not fully understood, especially the emission at photon energies higher than the applied electrostatic potential, so-called overbias emission. Here we report overbias emission for potentials that are near half of the optical bandgap energy in TMD-based tunneling LEDs. We show that this emission is not thermal in nature but consistent with exciton generation via a two-electron coherent tunneling process.