Heteroepitaxial Growth of Black Phosphorus on Tin Monosulfide.
basic_science · Level V
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- Record sourced from PubMed, PMID 38147351.
- Also identified by DOI 10.1021/acs.nanolett.3c04372.
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Abstract
Black phosphorus (Black P), a layered semiconductor with a layer-dependent bandgap and high carrier mobility, is a promising candidate for next-generation electronics and optoelectronics. However, the synthesis of large-area, layer-precise, single crystalline Black P films remains a challenge due to their high nucleation energy. Here, we report the molecular beam heteroepitaxy of single crystalline Black P films on a tin monosulfide (SnS) buffer layer grown on Au(100). The layer-by-layer growth mode enables the preparation of monolayer to trilayer films, with band gaps that reflect layer-dependent quantum confinement.