Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS₂/Graphene Transistor.

Abstract

Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by efficient modulation of surface potential in transistors. While negative-capacitance transition is reported in polycrystalline Pb(Zr_0.2Ti_0.8)O₃ (PZT) and HfZrO₂ (HZO) thin-films in few microseconds timescale, low SS is not persistent over a wide range of drain current when used instead of conventional dielectrics. In this work, the clear nano-second negative transition states in 2D single-crystal CuInP₂S₆ (CIPS) flakes have been demonstrated by an alternative fast-transient measurement technique. Further, integrating this ultrafast NC transition with the localized density of states of Dirac contacts and controlled charge transfer in the CIPS/channel (MoS₂/graphene) a state-of-the-art device architecture, negative capacitance Dirac source drain field effect transistor (FET) is introduced. This yields an ultralow SS of 4.8 mV dec^-1 with an average sub-10 SS across five decades with on-off ratio exceeding 10⁷, by simultaneous improvement of transport and body factors in monolayer MoS₂-based FET, outperforming all previous reports. This approach could pave the way to achieve ultralow-SS FETs for future high-speed and low-power electronics.