Negative Capacitance and Dielectric Constant of Nanocomposite SiAl<sub><i>z</i></sub>O<sub><i>x</i></sub>N<sub><i>y</i></sub>(Si) Films with Semiconductor Nanoparticles.
basic_science · Level V
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- Record sourced from PubMed, PMID 38165234.
- Also identified by DOI 10.1021/acs.nanolett.3c03627.
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Abstract
The electrical properties of nanocomposite SiAl<sub><i>z</i></sub>O<sub><i>x</i></sub>N<sub><i>y</i></sub>(Si) films containing Si nanoclusters embedded into amorphous SiAl<sub><i>z</i></sub>O<sub><i>x</i></sub>N<sub><i>y</i></sub> matrix have been studied by measurements of DC current-voltage and AC capacitance-voltage characteristics. Analysis of the results allowed us to conclude the existence of a negative dielectric constant. The temperature dependence of the negative dielectric constant has been obtained and analyzed. The negative capacitance has been revealed during measurements of capacitance-voltage characteristics at testing signal frequency of 2 kHz. The negative capacitance also points out the appearance of a negative dielectric constant effect. The qualitative model for explanation of negative dielectric constant based on peculiarities of SiAl<sub><i>z</i></sub>O<sub><i>x</i></sub>N<sub><i>y</i></sub>(Si) films polarization due to electron capture at Si nanoparticles-amorphous SiAl<sub><i>z</i></sub>O<sub><i>x</i></sub>N<sub><i>y</i></sub> matrix interface traps near cathode region has been proposed. In the case of AC <i>C</i>-<i>U</i> measurements, a negative capacitance is observed if conductivity current through the nanocomposite film is relatively high.