Three-dimensional integration of two-dimensional field-effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38200300.
- Also identified by DOI 10.1038/s41586-023-06860-5.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as 'More Moore'<sup>1</sup> but also introduces multifunctionalities for 'More than Moore'<sup>2</sup> technologies. Although silicon-based 3D integrated circuits are commercially available<sup>3-5</sup>, there is limited effort on 3D integration of emerging nanomaterials<sup>6,7</sup> such as two-dimensional (2D) materials despite their unique functionalities<sup>7-10</sup>. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS<sub>2</sub> with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS<sub>2</sub> and WSe<sub>2</sub> with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS<sub>2</sub> FETs (channel length, L<sub>CH</sub> = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.