Low-temperature grapho-epitaxial La-substituted BiFeO<sub>3</sub> on metallic perovskite.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38212317.
- Also identified by DOI 10.1038/s41467-024-44728-y and PMC identifier 10784590.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO<sub>3</sub> thin films have typically been deposited at relatively high temperatures (650-800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO<sub>3</sub> at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb<sub>0.75</sub>Bi<sub>0.25</sub>O<sub>3</sub> electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO<sub>3</sub>, BaPb<sub>0.75</sub>Bi<sub>0.25</sub>O<sub>3</sub>, and SrTiO<sub>3</sub> (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO<sub>3</sub>. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO<sub>3</sub>, where SrRuO<sub>3</sub> typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.