Stretchable Thin-Film Transistors Based on Wrinkled Graphene and MoS<sub>2</sub> Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 38214495.
- Also identified by DOI 10.1021/acs.nanolett.3c05091.
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Abstract
Two-dimensional (2D) materials are outstanding candidates for stretchable electronics, but a significant challenge is their heterogeneous integration into stretchable geometries on soft substrates. Here, we demonstrate a strategy for stretchable thin film transistors (2D S-TFT) based on wrinkled heterostructures on elastomer substrates where 2D materials formed the gate, source, drain, and channel and characterized them with Raman spectroscopy and transport measurements. The 2D S-TFTs had initial mobility of 4.9 ± 0.7 cm<sup>2</sup>/(V s). The wrinkling reduced the strain transferred into the 2D materials by a factor of 50, allowing a substrate stretch of up to 23% that could be cycled thousands of times without electrical degradation. The stretch did not alter the mobility but did lead to strain-induced threshold voltage shifts by Δ<i>V</i><sub>T</sub> = -1.9 V. These 2D S-TFTs form the foundation for stretchable integrated circuits and enable investigations of the impact of heterogeneous strain on electron transport.