<i>c</i>-Axis Aligned 3 nm Thick In₂O₃ Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off.

Abstract

Oxide semiconductors (OS) are attractive materials for memory and logic device applications owing to their low off-current, high field effect mobility, and superior large-area uniformity. Recently, successful research has reported the high field-effect mobility (μ_FE) of crystalline OS channel transistors (above 50 cm² V^-1 s^-1). However, the memory and logic device application presents challenges in mobility and stability trade-offs. Here, we propose a method for achieving high-mobility and high-stability by lowering the grain boundary effect. A DBADMIn precursor was synthesized to deposit highly <i>c</i>-axis-aligned C(222) crystalline 3 nm thick In₂O₃ films. In this study, the 250 °C deposited 3 nm thick In₂O₃ channel transistor exhibited high μ_FE of 41.12 cm² V^-1 s^-1, <i>V</i>_th of -0.50 V, and SS of 150 mV decade^-1 with superior stability of 0.16 V positive shift during PBTS at 100 °C, 3 MV cm^-1 stress conditions for 3 h.