Tuning Polarity in WSe<sub>2</sub>/AlScN FeFETs via Contact Engineering.
basic_science · Level V
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- Record sourced from PubMed, PMID 38271989.
- Also identified by DOI 10.1021/acsnano.3c09279.
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Abstract
Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional (2D) semiconductor channels and ferroelectric Al<sub>0.68</sub>Sc<sub>0.32</sub>N (AlScN) allow high-performance nonvolatile devices with exceptional ON-state currents, large ON/OFF current ratios, and large memory windows (MW). However, previous studies have solely focused on n-type FeFETs, leaving a crucial gap in the development of p-type and ambipolar FeFETs, which are essential for expanding their applicability to a wide range of circuit-level applications. Here, we present a comprehensive demonstration of n-type, p-type, and ambipolar FeFETs on an array scale using AlScN and multilayer/monolayer WSe<sub>2</sub>. The dominant injected carrier type is modulated through contact engineering at the metal-semiconductor junction, resulting in the realization of all three types of FeFETs. The effect of contact engineering on the carrier injection is further investigated through technology-computer-aided design simulations. Moreover, our 2D WSe<sub>2</sub>/AlScN FeFETs achieve high electron and hole current densities of ∼20 and ∼10 μA/μm, respectively, with a high ON/OFF ratio surpassing ∼10<sup>7</sup> and a large MW of >6 V (0.14 V/nm).