Flexible power generators by Ag<sub>2</sub>Se thin films with record-high thermoelectric performance.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38296942.
- Also identified by DOI 10.1038/s41467-024-45092-7 and PMC identifier 10830499.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Exploring new near-room-temperature thermoelectric materials is significant for replacing current high-cost Bi<sub>2</sub>Te<sub>3</sub>. This study highlights the potential of Ag<sub>2</sub>Se for wearable thermoelectric electronics, addressing the trade-off between performance and flexibility. A record-high ZT of 1.27 at 363 K is achieved in Ag<sub>2</sub>Se-based thin films with 3.2 at.% Te doping on Se sites, realized by a new concept of doping-induced orientation engineering. We reveal that Te-doping enhances film uniformity and (00l)-orientation and in turn carrier mobility by reducing the (00l) formation energy, confirmed by solid computational and experimental evidence. The doping simultaneously widens the bandgap, resulting in improved Seebeck coefficients and high power factors, and introduces Te<sub>Se</sub> point defects to effectively reduce the lattice thermal conductivity. A protective organic-polymer-based composite layer enhances film flexibility, and a rationally designed flexible thermoelectric device achieves an output power density of 1.5 mW cm<sup>-2</sup> for wearable power generation under a 20 K temperature difference.