Elucidating Piezoelectricity and Strain in Monolayer MoS<sub>2</sub> at the Nanoscale Using Kelvin Probe Force Microscopy.
basic_science · Level V
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- Record sourced from PubMed, PMID 38315833.
- Also identified by DOI 10.1021/acs.nanolett.3c03100.
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Abstract
Strain engineering modifies the optical and electronic properties of atomically thin transition metal dichalcogenides. Highly inhomogeneous strain distributions in two-dimensional materials can be easily realized, enabling control of properties on the nanoscale; however, methods for probing strain on the nanoscale remain challenging. In this work, we characterize inhomogeneously strained monolayer MoS<sub>2</sub> via Kelvin probe force microscopy and electrostatic gating, isolating the contributions of strain from other electrostatic effects and enabling the measurement of all components of the two-dimensional strain tensor on length scales less than 100 nm. The combination of these methods is used to calculate the spatial distribution of the electrostatic potential resulting from piezoelectricity, presenting a powerful way to characterize inhomogeneous strain and piezoelectricity that can be extended toward a variety of 2D materials.