Freestanding Crystalline β-Ga<sub>2</sub>O<sub>3</sub> Flexible Membrane Obtained via Lattice Epitaxy Engineering for High-Performance Optoelectronic Device.
basic_science · Level V
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- Record sourced from PubMed, PMID 38335925.
- Also identified by DOI 10.1021/acsnano.3c10025.
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Abstract
Wearable and flexible β-Ga<sub>2</sub>O<sub>3</sub>-based semiconductor devices have attracted considerable attention, due to their outstanding performance and potential application in real-time optoelectronic monitoring and sensing. However, the unavailability of high-quality crystalline and flexible β-Ga<sub>2</sub>O<sub>3</sub> membranes limits the fabrication of relevant devices. Here, through lattice epitaxy engineering together with the freestanding method, we demonstrate the preparation of a robust bending-resistant and crystalline β-Ga<sub>2</sub>O<sub>3</sub> (-201) membrane. Based on this, we fabricate a flexible β-Ga<sub>2</sub>O<sub>3</sub> photodetector device that shows comparable performance in photocurrent responsivity and spectral selectivity to conventional rigid β-Ga<sub>2</sub>O<sub>3</sub> film-based devices. Moreover, based on the transferred β-Ga<sub>2</sub>O<sub>3</sub> membrane on a silicon wafer, the PEDOT:PSS/β-Ga<sub>2</sub>O<sub>3</sub> p-n heterojunction device with self-powered characteristic was constructed, further demonstrating its superior heterogeneous integration ability with other functional materials. Our results not only demonstrate the feasibility of obtaining a high-quality crystalline and flexible β-Ga<sub>2</sub>O<sub>3</sub> membrane for an integrated device but also provide a pathway to realize flexible optical and electronic applications for other semiconducting materials.