Room Temperature Negative Differential Resistance with High Peak Current in MoS<sub>2</sub>/WSe<sub>2</sub> Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 38363877.
- Also identified by DOI 10.1021/acs.nanolett.3c04607 and PMC identifier 10906070.
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Abstract
Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile integration of p- and n-type materials without a lattice mismatch. Here, we demonstrate gate-tunable n- and p-type junctions based on vertical heterostructures of MoS<sub>2</sub> and WSe<sub>2</sub> using van der Waals (vdW) contacts. The p-n junction shows negative differential resistance (NDR) due to Fowler-Nordheim (F-N) tunneling through the triangular barrier formed by applying a global back-gate bias (<i>V</i><sub>GS</sub>). We also show that the integration of hexagonal boron nitride (<i>h</i>-BN) as an insulating tunnel barrier between MoS<sub>2</sub> and WSe<sub>2</sub> leads to the formation of sharp band edges and unintentional inelastic tunnelling current. The devices based on vdW contacts, global <i>V</i><sub>GS</sub>, and <i>h</i>-BN tunnel barriers exhibit NDR with a peak current (<i>I</i><sub>peak</sub>) of 315 μA, suggesting that the approach may be useful for applications.