Phase-selective in-plane heteroepitaxial growth of H-phase CrSe<sub>2</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 38409207.
- Also identified by DOI 10.1038/s41467-024-46087-0 and PMC identifier 10897461.
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Abstract
Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe<sub>2</sub>. The lattice-matched MoSe<sub>2</sub> nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe<sub>2</sub> with the formation of MoSe<sub>2</sub>-CrSe<sub>2</sub> heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe<sub>2</sub> monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe<sub>2</sub> exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.