Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI<sub>2</sub> Layers.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38426455.
- Also identified by DOI 10.1021/acs.nanolett.3c04869.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D "slidetronics". Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX<sub>2</sub> (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr<sub>2</sub> and HgI<sub>2</sub> in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI<sub>2</sub> layers possess strong sliding ferroelectricity up to 0.16 μC/cm<sup>2</sup>, readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI<sub>2</sub> layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime.