High-Field Electron Transport and High Saturation Velocity in Multilayer Indium Selenide Transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38451218.
- Also identified by DOI 10.1021/acsnano.3c11613.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Creating a high-frequency electron system demands a high saturation velocity (υ<sub>sat</sub>). Herein, we report the high-field transport properties of multilayer van der Waals (vdW) indium selenide (InSe). The InSe is on a hexagonal boron nitride substrate and encapsulated by a thin, noncontinuous In layer, resulting in an impressive electron mobility reaching 2600 cm<sup>2</sup>/(V s) at room temperature. The high-mobility InSe achieves υ<sub>sat</sub> exceeding 2 × 10<sup>7</sup> cm/s, which is superior to those of other gapped vdW semiconductors, and exhibits a 50-60% improvement in υ<sub>sat</sub> when cooled to 80 K. The temperature dependence of υ<sub>sat</sub> suggests an optical phonon energy (<i>ℏ</i>ω<sub>op</sub>) for InSe in the range of 23-27 meV, previously reported values for InSe. It is also notable that the measured υ<sub>sat</sub> values exceed what is expected according to the optical phonon emission model due to weak electron-phonon scattering. The superior υ<sub>sat</sub> of our InSe, despite its relatively small <i>ℏ</i>ω<sub>op</sub>, reveals its potential for high-frequency electronics, including applications to control cryogenic quantum computers in close proximity.