Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38506626.
- Also identified by DOI 10.1002/adma.202312736.
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Abstract
Spin-orbit interactions arise whenever the bulk inversion symmetry and/or structural inversion symmetry of a crystal is broken providing a bridge between a qubit's spin and orbital degree of freedom. While strong interactions can facilitate fast qubit operations by all-electrical control, they also provide a mechanism to couple charge noise thereby limiting qubit lifetimes. Previously believed to be negligible in bulk silicon, recent silicon nano-electronic devices have shown larger than bulk spin-orbit coupling strengths from Dresselhaus and Rashba couplings. Here, it is shown that with precision placement of phosphorus atoms in silicon along the [110] direction (without inversion symmetry) or [111] direction (with inversion symmetry), a wide range of Dresselhaus and Rashba coupling strength can be achieved from zero to 1113 × 10<sup>-13</sup>eV-cm. It is shown that with precision placement of phosphorus atoms, the local symmetry (C<sub>2v</sub>, D<sub>2d</sub>, and D<sub>3d</sub>) can be changed to engineer spin-orbit interactions. Since spin-orbit interactions affect both qubit operation and lifetimes, understanding their impact is essential for quantum processor design.