One-Dimensional MoS<sub>2</sub> Nanoscrolls as Miniaturized Memories.

Qiao, Shuo; Qiu, Yuanyuan; Lu, Yue; Wang, Zihan; Yuan, Mingxuan; Ji, Qingqing · Nano Lett · 2024

basic_science · Level V

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Abstract

Dimensionality of materials is closely related to their physical properties. For two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS<sub>2</sub>), converting them from 2D nanosheets to one-dimensional (1D) nanoscrolls could contribute to remarkable electronic and optoelectronic properties, yet the rolling-up process still lacks sufficient controllability, which limits the development of their device applications. Herein we report a modified solvent evaporation-induced rolling process that halts at intermediate states and achieve MoS<sub>2</sub> nanoscrolls with high yield and decent axial uniformity. The accordingly fabricated nanoscroll memories exhibit an on/off ratio of ∼10<sup>4</sup> and a retention time exceeding 10<sup>3</sup> s and can realize multilevel storage with pulsed gate voltages. Such open-end, high-curvature, and hollow 1D nanostructures provide new possibilities to manipulate the hysteresis windows and, consequently, the charge storage characteristics of nanoscale field-effect transistors, thereby holding great promise for the development of miniaturized memories.