Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi<sub>2</sub>Te<sub>4</sub>.

Li, Yaoxin; Wang, Yongchao; Lian, Zichen; Li, Hao; Gao, Zhiting; Xu, Liangcai; Wang, Huan; Lu, Rui'e et al. · Nat Commun · 2024

basic_science · Level V

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Abstract

The van der Waals antiferromagnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub> represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi<sub>2</sub>Te<sub>4</sub> in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi<sub>2</sub>Te<sub>4</sub>. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi<sub>2</sub>Te<sub>4</sub>, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi<sub>2</sub>Te<sub>4</sub> flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi<sub>2</sub>Te<sub>4</sub>, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.