Atomic Layer Deposition of WO<sub>3</sub>-Doped In<sub>2</sub>O<sub>3</sub> for Reliable and Scalable BEOL-Compatible Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 38686670.
- Also identified by DOI 10.1021/acs.nanolett.4c00746.
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Abstract
Tungsten oxide (WO<sub>3</sub>) doped indium oxide (IWO) field-effect transistors (FET), synthesized using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line (BEOL) compatibility, are demonstrated. Low-concentration (1∼4 W atom %) WO<sub>3</sub>-doping in In<sub>2</sub>O<sub>3</sub> films is achieved by adjusting cycle ratios of the indium and tungsten precursors with the oxidant coreactant. Such doping suppresses oxygen deficiency from In<sub>2</sub>O<sub>2.5</sub> to In<sub>2</sub>O<sub>3</sub> stoichiometry with only 1 atom % W, allowing devices to turn off stably and enhancing threshold voltage stability. The ALD IWO FETs exhibit superior performance, including a low subthreshold slope of 67 mV/decade and negligible hysteresis. Strong tunability of the threshold voltage (<i>V</i><sub>th</sub>) is achieved through W concentration tuning, with 2 atom % IWO FETs showing an optimized <i>V</i><sub>th</sub> for enhancement-mode and a high drain current. ALD IWO FETs have remarkable stability under bias stress and nearly ideal performance extending to sub-100 nm channel lengths, making them promising candidates for high-performance monolithic 3D integrated devices.