Giant dielectric tunability in ferroelectric ceramics with ultralow loss by ion substitution design.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38704395.
- Also identified by DOI 10.1038/s41467-024-48264-7 and PMC identifier 11069505.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Due to their responsiveness to modulation by external direct current fields, dielectric tunable materials are extensively utilized in integrated components, such as ferroelectric phase shifters. Barium strontium titanate ceramics have been considered the most potential tunable materials for a long time. However, the significant dielectric loss and high voltage drive have limited their further applications. Recently, Bi<sub>6</sub>Ti<sub>5</sub>WO<sub>22</sub> ceramic has regained attention for its high dielectric tunability with low loss. In this study, we judiciously introduce Nb<sup>5+</sup> with a larger ionic radius, replacing Ti<sup>4+</sup> and W<sup>6+</sup>. This successful substitution enables the modulation of the phase transition temperature of Bi<sub>6</sub>Ti<sub>5</sub>WO<sub>22</sub> ceramics to room temperature, resulting in superior tunable properties. Specifically, the 0.7Bi<sub>6</sub>Ti<sub>5</sub>WO<sub>22</sub>-0.3Bi<sub>6</sub>Ti<sub>4</sub>Nb<sub>2</sub>O<sub>22</sub> ceramics exhibit giant tunability (~75.6%) with ultralow loss (<0.002) under a low electric field (1.5 kV/mm). This tunability is twice that of barium strontium titanate ceramics with a similar dielectric constant and only one-tenth of the loss. Neutron powder diffraction and transmission-electron-microscopy illustrate the nanodomains and micro-strains influenced by ion substitution. Density functional theory simulation calculations reveal the contribution of ion substitution to polarization. The research provides an ideal substitute for tunable material and a general strategy for adjusting phase transition temperature to improve dielectric properties.