Dimensional and Doping Engineering of Chiral Perovskites with Enhanced Spin Selectivity for Green Emissive Spin Light-Emitting Diodes.
basic_science · Level V
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- Record sourced from PubMed, PMID 38717110.
- Also identified by DOI 10.1021/acs.nanolett.4c01138.
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Abstract
Chiral perovskites play a pivotal role in spintronics and optoelectronic systems attributed to their chiral-induced spin selectivity (CISS) effect. Specifically, they allow for spin-polarized charge transport in spin light-emitting diodes (LEDs), yielding circularly polarized electroluminescence at room temperature without external magnetic fields. However, chiral lead bromide-based perovskites have yet to achieve high-performance green emissive spin-LEDs, owing to limited CISS effects and charge transport. Herein, we employ dimensional regulation and Sn<sup>2+</sup>-doping to optimize chiral bromide-based perovskite architecture for green emissive spin-LEDs. The optimized (PEA)<sub><i>x</i></sub>(S/R-PRDA)<sub>2-<i>x</i></sub>Sn<sub>0.1</sub>Pb<sub>0.9</sub>Br<sub>4</sub> chiral perovskite film exhibits an enhanced CISS effect, higher hole mobility, and better energy level alignment with the emissive layer. These improvements allow us to fabricate green emissive spin-LEDs with an external quantum efficiency (EQE) of 5.7% and an asymmetry factor |<i>g</i><sub>CP-EL</sub>| of 1.1 × 10<sup>-3</sup>. This work highlights the importance of tailored perovskite architectures and doping strategies in advancing spintronics for optoelectronic applications.