Giant Carrier Mobility in a Room-Temperature Ferromagnetic VSi<sub>2</sub>N<sub>4</sub> Monolayer.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 38767304.
- Also identified by DOI 10.1021/acs.nanolett.4c01416.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Using density functional theory (DFT), we investigate that two possible phases of VSi<sub>2</sub>N<sub>4</sub> (VSN) may be realized, one called the "H phase" corresponding to what is known from calculation and herein the other new "T phase" being stabilized by a biaxial tensile strain of 3%. Significantly, the H phase is predicted to display a giant carrier mobility of 1 × 10<sup>6</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, which exceeds that for most 2D magnetic materials, with a Curie temperature (<i>T</i><sub>C</sub>) exceeding room temperature and a band gap of 2.01 eV at the K point. Following the H-T phase transition, the direct band gap shifts to the Γ point and increases to 2.59 eV. The Monte Carlo (MC) simulations also indicate that <i>T</i><sub>C</sub> of the T phase VSN can be effectively modulated by strain, reaching room temperature under a biaxial strain of -4%. These results show that VSN should be a promising functional material for future nanoelectronics.