Field-Free Manipulation of Two-Dimensional Ferromagnet CrTe<sub>2</sub> by Spin-Orbit Torques.
basic_science · Level V
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- Record sourced from PubMed, PMID 38856112.
- Also identified by DOI 10.1021/acs.nanolett.4c01366.
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Abstract
Electrical manipulation of magnetic states in two-dimensional ferromagnetic systems is crucial in information storage and low-dimensional spintronics. Spin-orbit torque presents a rapid and energy-efficient method for electrical control of the magnetization. In this letter, we demonstrate a wafer-scale spin-orbit torque switching of two-dimensional ferromagnetic states. Using molecular beam epitaxy, we fabricate two-dimensional heterostructures composed of low crystal-symmetry WTe<sub>2</sub> and ferromagnet CrTe<sub>2</sub> with perpendicular anisotropy. By utilizing out-of-plane spins generated from WTe<sub>2</sub>, we achieve field-free switching of the CrTe<sub>2</sub> perpendicular magnetization. The threshold switching current density in CrTe<sub>2</sub>/WTe<sub>2</sub> is 1.2 × 10<sup>6</sup> A/cm<sup>2</sup>, 20 times smaller than that of the CrTe<sub>2</sub>/Pt control sample even with an external magnetic field. In addition, the switching behavior can be modulated by external magnetic fields and crystal symmetry. Our findings demonstrate a controllable and all-electric manipulation of perpendicular magnetization in a two-dimensional ferromagnet, representing a significant advancement toward the practical implementation of low-dimensional spintronic devices.