Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 38862115.
- Also identified by DOI 10.1002/adma.202403743.
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Abstract
Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp<sup>2</sup> C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal-oxide-semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr<sub>3</sub>/CNT and exhibits a subthreshold swing of 35 mV dec<sup>-1</sup> with a high on-state current of up to 4.9 µA per tube and an on/off current ratio of up to 10<sup>5</sup> at room temperature. The quasi-BG TFET based on the CsPbBr<sub>3</sub>/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits.