Epitaxial Growth of Two-Dimensional MoO<sub>2</sub>-MoSe<sub>2</sub> Metal-Semiconductor Heterostructures for Schottky Diodes.
basic_science · Level V
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- Record sourced from PubMed, PMID 38885458.
- Also identified by DOI 10.1021/acs.nanolett.4c01865.
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Abstract
The metal-semiconductor interface fabricated by conventional methods often suffers from contamination, degrading transport performance. Herein, we propose a one-pot chemical vapor deposition (CVD) process to create a two-dimensional (2D) MoO<sub>2</sub>-MoSe<sub>2</sub> heterostructure by growing MoO<sub>2</sub> seeds under a hydrogen environment, followed by depositing MoSe<sub>2</sub> on the surface and periphery. The ultraclean interface is verified by cross-sectional scanning transmission electron microscopy and photoluminescence. Along with the high work function of semimetallic MoO<sub>2</sub> (<i>E</i><sub>f</sub> = -5.6 eV), a high-rectification Schottky diode is fabricated based on this heterostructure. Furthermore, the Schottky diode exhibits an excellent photovoltaic effect with a high open-circuit voltage of 0.26 eV and ultrafast photoresponse, owing to the naturally formed metal-semiconductor contact with suppressed pinning effect. Our method paves the way for the fabrication of an ultraclean 2D metal-semiconductor interface, without defects or contamination, offering promising prospects for future nanoelectronics.